Macom Technology Solutions Inc. Announces New Suite of High Performance Rf Solutions Designed to Meet the Demanding Requirements of Advanced Radar Systems

Published: 2025-06-12 11:36:16 ET MTSI

Published on 06/12/2025 at 11:36

MACOM Technology Solutions Inc. announced a new suite of high performance RF solutions designed to meet the demanding requirements of advanced radar systems. Many of these solutions will be demonstrated in MACOM's Booth 943 at the upcoming International Microwave Symposium (IMS) on June 17 to 19, 2025 in San Francisco, CA. S-Band (2 - 4 GHz): high Power GaN-on-SiC Amplifiers: A new family of 65 V, 50-ohm input and output amplifiers designed for radar applications is now available. Operating over the 2.7 - 3.8 GHz range, these amplifiers can deliver output power up to 800 W. The full portfolio of 65 V S-Band radar products includes the MAPC-A4029, MAPC-A4030, MAPC-A4031 and MAPC-A4032.

C-Band (4 - 8 GHz): High Power GaN-on- SiC Amplifier: The MAPC-A4003-AB is a 700 W GaN-on-Sic Power Amplifier (PA). Leveraging MACOM's GaN-on-Si C process technology, the 50-ohm PA is designed to be a compact 700 W solution for 5.2 - 5.9 GHz radar applications. The WSA4501S is a high efficiency GaN MMIC and ideal for large radar arrays.

The 50 WGaN-on-SiC MMIC PA features 57% power added efficiency (PAE). It supports radar customers' evolving needs for longer pulse conditions, with capabilities of up to 500 usec and 20% duty cycle from 5.2 - 5. 9 GHz. X-Band (8 - 12 GHz): Compact 1 kW Amplifier Pallet: The MAPC-P1060 is a 1 kW Pulsed PA Pallet offering 52 dB of gain and 30% efficiency, making it ideal for high power microwave systems and radar applications in X-Band frequencies.

The pallet integrates MACOM's power management ICs (PMICs) for bias sequencing and temperature compensation. Highly Integrated Front End Module: The WSM5000S Front End Module (FEM) features a GaN-on-SiD power amplifier, GaN-on-SiS switch, and a GaAs low noise amplifier (LNA) with an integrated limiter. In transmit mode, it provides up to 5 W of saturated output power with 40% PAE and 32 dB of gain.

The receive side can provide 16 dB of gain with a 2.5 dB of noise figure and 21 dBm OIP3. The integrated limiter provides receive side protection. Ku-Band (12 - 18 GHz): High Power GaN - 18 GHz): High PowerGaN-on-Si C MMIC offers high output power and efficiency.

It can provide can up to 80 W of saturated output power with 25 dB of large signal gain and 35% power added efficiency (PA E) in pulsed operation. It is available in multiple formats, including bare die, surface mount QFN and flange.